用四点电阻测量法检测凸点边缘接触电阻退化

M. Seungje, D. Nagalingam, A. Quah, G. Ang, H. Ng, A. Teo, N. Xu, Z. Mai, J. Lam
{"title":"用四点电阻测量法检测凸点边缘接触电阻退化","authors":"M. Seungje, D. Nagalingam, A. Quah, G. Ang, H. Ng, A. Teo, N. Xu, Z. Mai, J. Lam","doi":"10.1109/IPFA.2016.7564237","DOIUrl":null,"url":null,"abstract":"Wafer Level Chip Scale Packaging (WLCSP) involves more bumping process steps after receiving the passivated product wafer from the foundry manufacturing line. As wafer sort is usually tested after the bumping process, on the solder bump, any process drift during bumping, especially the contact resistance degradation at the Aluminum (Al) pad to Redistribution Layer (RDL) interface or RDL to solder bump interface, can also lead to severe yield loss. In such situations, foundries still play a critical role in working with the bump house to determine the cause of failure. This paper describes three case studies on how the four-point resistance measurement method was employed effectively on the failure pad to accurately detect a marginal increase in bump stack resistance resulting in yield loss and to further localize the root cause of high interface contact resistance.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Detection of solder bump marginal contact resistance degradation using 4-point resistance measurement method\",\"authors\":\"M. Seungje, D. Nagalingam, A. Quah, G. Ang, H. Ng, A. Teo, N. Xu, Z. Mai, J. Lam\",\"doi\":\"10.1109/IPFA.2016.7564237\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Wafer Level Chip Scale Packaging (WLCSP) involves more bumping process steps after receiving the passivated product wafer from the foundry manufacturing line. As wafer sort is usually tested after the bumping process, on the solder bump, any process drift during bumping, especially the contact resistance degradation at the Aluminum (Al) pad to Redistribution Layer (RDL) interface or RDL to solder bump interface, can also lead to severe yield loss. In such situations, foundries still play a critical role in working with the bump house to determine the cause of failure. This paper describes three case studies on how the four-point resistance measurement method was employed effectively on the failure pad to accurately detect a marginal increase in bump stack resistance resulting in yield loss and to further localize the root cause of high interface contact resistance.\",\"PeriodicalId\":206237,\"journal\":{\"name\":\"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"68 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2016.7564237\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2016.7564237","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

晶圆级芯片规模封装(WLCSP)在从代工生产线收到钝化产品晶圆后,涉及更多的工艺步骤。由于晶圆分选通常在碰撞过程之后进行测试,在凸点上,碰撞过程中的任何工艺漂移,特别是铝(Al)焊盘到再分布层(RDL)界面或RDL到凸点界面的接触电阻下降,也会导致严重的良率损失。在这种情况下,铸造厂仍然在与碰撞室一起工作以确定故障原因方面发挥关键作用。本文介绍了如何在失效焊盘上有效地采用四点电阻测量方法,准确地检测到碰撞堆电阻的边际增加导致产量损失,并进一步定位高界面接触电阻的根本原因的三个案例。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Detection of solder bump marginal contact resistance degradation using 4-point resistance measurement method
Wafer Level Chip Scale Packaging (WLCSP) involves more bumping process steps after receiving the passivated product wafer from the foundry manufacturing line. As wafer sort is usually tested after the bumping process, on the solder bump, any process drift during bumping, especially the contact resistance degradation at the Aluminum (Al) pad to Redistribution Layer (RDL) interface or RDL to solder bump interface, can also lead to severe yield loss. In such situations, foundries still play a critical role in working with the bump house to determine the cause of failure. This paper describes three case studies on how the four-point resistance measurement method was employed effectively on the failure pad to accurately detect a marginal increase in bump stack resistance resulting in yield loss and to further localize the root cause of high interface contact resistance.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信