Dechao Guo, G. Karve, Gen Tsutsui, K. Lim, R. Robison, T. Hook, Reinaldo A. Vega, Derrick Liu, S. Bedell, S. Mochizuki, F. Lie, Kerem Akarvardar, Miaomiao Wang, Ruqiang Bao, Sean D. Burns, Victor Chan, K. Cheng, J. Demarest, Jody A. Fronheiser, Pouya Hashemi, James J. Kelly, Jinghong Li, Nicolas Loubet, P. Montanini, Bhagawan Sahu, M. Sankarapandian, S. Sieg, J. Sporre, J. Strane, R. Southwick, N. Tripathi, R. Venigalla, Junli Wang, Koji Watanabe, C. Yeung, D. Gupta, Bruce B. Doris, Nelson Felix, Ajey Poovannummoottil Jacob, H. Jagannathan, S. Kanakasabapathy, Renee T. Mo, Vijay Narayanan, D. Sadana, P. Oldiges, J. Stathis, T. Yamashita, V. Paruchuri, M. Colburn, Andreas Knorr, R. Divakaruni, H. Bu, M. Khare
{"title":"具有10nm及以上高迁移率SiGe通道的FINFET技术","authors":"Dechao Guo, G. Karve, Gen Tsutsui, K. Lim, R. Robison, T. Hook, Reinaldo A. Vega, Derrick Liu, S. Bedell, S. Mochizuki, F. Lie, Kerem Akarvardar, Miaomiao Wang, Ruqiang Bao, Sean D. Burns, Victor Chan, K. Cheng, J. Demarest, Jody A. Fronheiser, Pouya Hashemi, James J. Kelly, Jinghong Li, Nicolas Loubet, P. Montanini, Bhagawan Sahu, M. Sankarapandian, S. Sieg, J. Sporre, J. Strane, R. Southwick, N. Tripathi, R. Venigalla, Junli Wang, Koji Watanabe, C. Yeung, D. Gupta, Bruce B. Doris, Nelson Felix, Ajey Poovannummoottil Jacob, H. Jagannathan, S. Kanakasabapathy, Renee T. Mo, Vijay Narayanan, D. Sadana, P. Oldiges, J. Stathis, T. Yamashita, V. Paruchuri, M. Colburn, Andreas Knorr, R. Divakaruni, H. Bu, M. Khare","doi":"10.1109/VLSIT.2016.7573360","DOIUrl":null,"url":null,"abstract":"SiGe for channel material has been explored as a major technology element after the introduction of FINFET into CMOS technology [1-4]. Research on long channel FETs and discrete short channel FETs demonstrated benefits in mobility [1-4] and reliability [2]. Given the disruption that SiGe FIN brings, every aspect associated with SiGe FIN needs to be carefully studied towards technology insertion. In this paper, we report the latest SiGe-based FINFET CMOS technology development. CMOS FINFETs with Si-FIN nFET and SiGe-FIN pFET is demonstrated as a viable technology solution for both server and mobile applications at 10nm node and beyond.","PeriodicalId":129300,"journal":{"name":"2016 IEEE Symposium on VLSI Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"44","resultStr":"{\"title\":\"FINFET technology featuring high mobility SiGe channel for 10nm and beyond\",\"authors\":\"Dechao Guo, G. Karve, Gen Tsutsui, K. Lim, R. Robison, T. Hook, Reinaldo A. Vega, Derrick Liu, S. Bedell, S. Mochizuki, F. Lie, Kerem Akarvardar, Miaomiao Wang, Ruqiang Bao, Sean D. Burns, Victor Chan, K. Cheng, J. Demarest, Jody A. Fronheiser, Pouya Hashemi, James J. Kelly, Jinghong Li, Nicolas Loubet, P. Montanini, Bhagawan Sahu, M. Sankarapandian, S. Sieg, J. Sporre, J. Strane, R. Southwick, N. Tripathi, R. Venigalla, Junli Wang, Koji Watanabe, C. Yeung, D. Gupta, Bruce B. Doris, Nelson Felix, Ajey Poovannummoottil Jacob, H. Jagannathan, S. Kanakasabapathy, Renee T. Mo, Vijay Narayanan, D. Sadana, P. Oldiges, J. Stathis, T. Yamashita, V. Paruchuri, M. Colburn, Andreas Knorr, R. Divakaruni, H. Bu, M. Khare\",\"doi\":\"10.1109/VLSIT.2016.7573360\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SiGe for channel material has been explored as a major technology element after the introduction of FINFET into CMOS technology [1-4]. Research on long channel FETs and discrete short channel FETs demonstrated benefits in mobility [1-4] and reliability [2]. Given the disruption that SiGe FIN brings, every aspect associated with SiGe FIN needs to be carefully studied towards technology insertion. In this paper, we report the latest SiGe-based FINFET CMOS technology development. CMOS FINFETs with Si-FIN nFET and SiGe-FIN pFET is demonstrated as a viable technology solution for both server and mobile applications at 10nm node and beyond.\",\"PeriodicalId\":129300,\"journal\":{\"name\":\"2016 IEEE Symposium on VLSI Technology\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"44\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2016.7573360\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2016.7573360","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
FINFET technology featuring high mobility SiGe channel for 10nm and beyond
SiGe for channel material has been explored as a major technology element after the introduction of FINFET into CMOS technology [1-4]. Research on long channel FETs and discrete short channel FETs demonstrated benefits in mobility [1-4] and reliability [2]. Given the disruption that SiGe FIN brings, every aspect associated with SiGe FIN needs to be carefully studied towards technology insertion. In this paper, we report the latest SiGe-based FINFET CMOS technology development. CMOS FINFETs with Si-FIN nFET and SiGe-FIN pFET is demonstrated as a viable technology solution for both server and mobile applications at 10nm node and beyond.
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