基于浅沟槽隔离的低压双工作功能CMOS技术的先进栅极堆栈架构

1997 Symposium on VLSI Technology Pub Date : 1997-06-10 DOI:10.1109/VLSIT.1997.623700

Schwalke, Kerber, Koller, Ludwig, Seidl

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引用次数: 4

摘要

在这项工作中，我们提出了先进的栅极堆栈架构EXTIGATE(扩展沟槽隔离栅极技术)，它解决了与n+/p+双工作功能栅极技术和浅沟槽隔离(STI)相关的主要问题。这些成就在不增加过程复杂性的情况下实现。此外，扩大了工艺窗口，从而实现了稳健性低电压双工作功能STI-CMOS工艺。

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Advanced Gate-stack Architecture For Low-voltage Dual-workfunction CMOS Technologies With Shallow Trench Isolation

In this work we present the advanced gate-stack architecture EXTIGATE (Extended Trench Isolation GAte TEchnology) which solves major problems associated with n+/p+ dual workfunction gate technology and shallow-trench-isolation (STI). These achievements are realized without an increase in process complexity. Furthermore, the process window is enlarged leading to a robust low-voltage dual-workfunction STI-CMOS process.

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1997 Symposium on VLSI Technology

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