Physical model and numerical results of dissociation kinetics of hydrogen-passivated Si/SiO/sub 2/ interface defects

A simple model of thermal dissociation of hydrogen from silicon dangling bonds (P/sub b/ centers) and their hydrogen passivation with vacuum annealing is suggested. It takes into account the reactions occurring for hydrogen with defect states at the interface of the Si/SiO/sub 2/ structure as well as the diffusion process for atomic and molecular hydrogen. The reaction kinetic coefficients were calculated in diffusion approximation. Excellent agreement of calculations with experimental data was obtained in the temperature range (480-700/spl deg/C), and oxide thickness of (200-1024 /spl Aring/) for the (111) and (100) interfaces.