用于TEM微观结构研究的新型TIM材料样品制备方法

2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI:10.1109/IPFA.2006.251029

C. Chan, X. Zhao, J. Chin

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摘要

本文介绍了一种在高性能微处理器产品中应用的铟预成型热界面材料(TIM)上制备TEM样品的成功方法。实验结果表明，大大减少了FIB相关的伪影，从而可以研究TIM与IC芯片之间的金属间化合物(IMC)层的相形貌

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Novel Sample Preparation Methodology on TIM Materials for TEM Microstructure Study

This paper presents a successful methodology for TEM sample preparation on indium pre-form thermal interface material (TIM), which is currently used in high-performance microprocessor product. Experimental results show that FIB related artifacts are greatly reduced, thus enables phase morphology study of inter-metallic compound (IMC) layers between TIM and IC chip

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2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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