由各向异性蚀刻和硅直接晶圆键合形成的可入腔散热片

[1992 Proceedings] Eighth Annual IEEE Semiconductor Thermal Measurement and Management Symposium Pub Date : 1992-02-03 DOI:10.1109/STHERM.1992.172863

A. Goyal, R. Jaeger, S. Bhavnani, C. Ellis, N. Phadke, M. Azimi-Rashti, J. Goodling

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引用次数: 6

摘要

采用两步各向异性蚀刻工艺，然后进行硅直接晶圆键合，制备了用于硅多芯片封装增强液体冷却的硅重入腔散热器。作者报告了一种利用硅集成电路加工形成这种再入腔的新方法。腔口开口范围从500到7.5 μ m已批量制造与两步工艺。重入腔抑制了通常与液体浸没冷却的自由对流和核沸腾状态之间的过渡有关的温度超调。观察到在热流低于2w /cm/sup /时发生沸腾。

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Re-entrant cavity heat sinks formed by anisotropic etching and silicon direct wafer bonding

A silicon re-entrant cavity heat sink for enhanced liquid cooling of silicon multichip packages can be fabricated using a two-step anisotropic etching process, followed by silicon direct wafer bonding. The authors report a novel method of formation of such re-entrant cavities using silicon integrated circuit processing. Cavity mouth openings ranging from 500 to 7.5 mu m have been batch fabricated with the two-step process. The re-entrant cavities suppress the temperature overshoot normally associated with the transition between the free convection and nucleate boiling regimes of liquid immersion cooling. It was observed that boiling occurs at heat fluxes below 2 W/cm/sup 2/.<>

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[1992 Proceedings] Eighth Annual IEEE Semiconductor Thermal Measurement and Management Symposium

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