Si/Ni-Silicide Schottky junctions with atomically flat interfaces using NiSi2 source

Si/Ni-silicide Schottky junctions with atomically flat and thermodynamically stable interfaces have been achieved by using NiSi2 source. The flat interfaces have been obtained from forming thin epitaxial NiSi2 layer without Si substrate consumption on the interfaces. A robust φBn of ∼0.66 eV and ideally stable n-factor of ∼1.00 were achieved from the Schottky barrier diode formed in the straightforward fabrication process. The facts are very beneficial for designing future nano-scale FETs.