{"title":"铜与氧化物和低钾电介质互连中的漂白效应","authors":"Yuejin Hou, C. Tan","doi":"10.1109/IPFA.2007.4378059","DOIUrl":null,"url":null,"abstract":"This paper investigates the mechanism of the temperature dependence of the Blech product for both the Cu/oxide and Cu/low-k interconnections. Using finite element modeling (FEM), we demonstrate that Blech product should be temperature dependent at high temperature if the inelastic behavior of Cu is considered. This inelastic behavior has not been taken into consideration in the previous works. The simulated Blech product is found to be consistent with the literature reported values.","PeriodicalId":334987,"journal":{"name":"2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Blech Effect in Cu Interconnects with Oxide and Low-k Dielectrics\",\"authors\":\"Yuejin Hou, C. Tan\",\"doi\":\"10.1109/IPFA.2007.4378059\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper investigates the mechanism of the temperature dependence of the Blech product for both the Cu/oxide and Cu/low-k interconnections. Using finite element modeling (FEM), we demonstrate that Blech product should be temperature dependent at high temperature if the inelastic behavior of Cu is considered. This inelastic behavior has not been taken into consideration in the previous works. The simulated Blech product is found to be consistent with the literature reported values.\",\"PeriodicalId\":334987,\"journal\":{\"name\":\"2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2007.4378059\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2007.4378059","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Blech Effect in Cu Interconnects with Oxide and Low-k Dielectrics
This paper investigates the mechanism of the temperature dependence of the Blech product for both the Cu/oxide and Cu/low-k interconnections. Using finite element modeling (FEM), we demonstrate that Blech product should be temperature dependent at high temperature if the inelastic behavior of Cu is considered. This inelastic behavior has not been taken into consideration in the previous works. The simulated Blech product is found to be consistent with the literature reported values.