开孔硅孔(TSV)技术中的火山效应

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI:10.1109/IRPS.2012.6241924

J. Kraft, E. Stuckler, C. Cassidy, W. Niko, F. Schrank, E. Wachmann, C. Gspan, F. Hofer

{"title":"开孔硅孔(TSV)技术中的火山效应","authors":"J. Kraft, E. Stuckler, C. Cassidy, W. Niko, F. Schrank, E. Wachmann, C. Gspan, F. Hofer","doi":"10.1109/IRPS.2012.6241924","DOIUrl":null,"url":null,"abstract":"Through Silicon Via (TSV) technology, to serve as electrical connection between metallization layers on the front and backside of the same wafer, has been developed by austriamicrosystems AG. During the development phase, defects were found that could be assigned to an established defect type known as “contact liner volcano”. To our knowledge this is the first time that such a volcano formation is reported from the inside of a TSV.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Volcano effect in open through silicon via (TSV) technology\",\"authors\":\"J. Kraft, E. Stuckler, C. Cassidy, W. Niko, F. Schrank, E. Wachmann, C. Gspan, F. Hofer\",\"doi\":\"10.1109/IRPS.2012.6241924\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Through Silicon Via (TSV) technology, to serve as electrical connection between metallization layers on the front and backside of the same wafer, has been developed by austriamicrosystems AG. During the development phase, defects were found that could be assigned to an established defect type known as “contact liner volcano”. To our knowledge this is the first time that such a volcano formation is reported from the inside of a TSV.\",\"PeriodicalId\":341663,\"journal\":{\"name\":\"2012 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2012.6241924\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2012.6241924","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

通过硅通孔(TSV)技术，在同一晶圆片的前后金属化层之间充当电气连接，是由奥地利微系统公司开发的。在开发阶段，发现的缺陷可以被分配到一个已知的缺陷类型，即“接触衬里火山”。据我们所知，这是第一次从TSV内部报道这样的火山形成。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Volcano effect in open through silicon via (TSV) technology

Through Silicon Via (TSV) technology, to serve as electrical connection between metallization layers on the front and backside of the same wafer, has been developed by austriamicrosystems AG. During the development phase, defects were found that could be assigned to an established defect type known as “contact liner volcano”. To our knowledge this is the first time that such a volcano formation is reported from the inside of a TSV.

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2012 IEEE International Reliability Physics Symposium (IRPS)

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