{"title":"作为应变传感器的横向后向二极管","authors":"A. Friedrich, P. Besse, E. Fullin, R. Popovic","doi":"10.1109/IEDM.1995.499292","DOIUrl":null,"url":null,"abstract":"We present a new type of lateral backward silicon diode intended to be used as a strain sensor. The devices are fabricated using a close-to-conventional silicon technology. The diodes have a prevailing tunnelling current around zero bias. They exhibit a high strain sensitivity and a low temperature coefficient of opposite sign to that of conventional piezoresistors.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Lateral backward diodes as strain sensors\",\"authors\":\"A. Friedrich, P. Besse, E. Fullin, R. Popovic\",\"doi\":\"10.1109/IEDM.1995.499292\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a new type of lateral backward silicon diode intended to be used as a strain sensor. The devices are fabricated using a close-to-conventional silicon technology. The diodes have a prevailing tunnelling current around zero bias. They exhibit a high strain sensitivity and a low temperature coefficient of opposite sign to that of conventional piezoresistors.\",\"PeriodicalId\":137564,\"journal\":{\"name\":\"Proceedings of International Electron Devices Meeting\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1995.499292\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1995.499292","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We present a new type of lateral backward silicon diode intended to be used as a strain sensor. The devices are fabricated using a close-to-conventional silicon technology. The diodes have a prevailing tunnelling current around zero bias. They exhibit a high strain sensitivity and a low temperature coefficient of opposite sign to that of conventional piezoresistors.
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