LDMOS输出驱动器具有低压导通现象的异常ESD失效模式

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI:10.1109/IRPS.2012.6241891

Jaeyoung Park, M. Orshansky

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引用次数: 3

摘要

在DC-DC变换器芯片上发现了LDMOS中由于低压导通现象而导致的异常ESD失效模式。实验研究表明，栅极耦合是造成这种低压导通行为的根本原因。为了防止这种行为，提出了一种新型的门关断电路。该解决方案是有效的:测试芯片测量显示HBM值从1500 V增加到4000 V。

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Abnormal ESD failure mode with low-voltage turn-on phenomenon of LDMOS output driver

An abnormal ESD failure mode caused by a low-voltage turn-on phenomenon in an LDMOS is found on a DC-DC converter chip. Experimental investigation has shown that gate-coupling is the root cause of such low-voltage turn-on behavior. To prevent this behavior, a novel gate turn-off circuit is proposed. The solution is effective: the test chip measurements show an increase in HBM values from 1500 V to 4000 V.

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来源期刊

2012 IEEE International Reliability Physics Symposium (IRPS)

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