144ghz InP/InGaAs复合集电极异质结构双极晶体管

1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1992.307312

A. Feygenson, R. Hamm, P. Smith, M. Pinto, R. Montgomery, R. D. Yadvish, H. Temkin

{"title":"144ghz InP/InGaAs复合集电极异质结构双极晶体管","authors":"A. Feygenson, R. Hamm, P. Smith, M. Pinto, R. Montgomery, R. D. Yadvish, H. Temkin","doi":"10.1109/IEDM.1992.307312","DOIUrl":null,"url":null,"abstract":"We describe a composite collector InP/InGaAs heterostructure bipolar transistor with f/sub T/=144 GHz and f/sub max/=81 GHz. The breakdown voltage BV/sub CEO/ is greater than 5V and output conductance is essentially independent of the collector voltage. This combination of performance characteristics is obtained with a carefully optimized collector structure. A monolithic transimpedance amplifier based on composite collector transistors has a bandwidth of 28 GHz and gain of 40 dB Omega . A hybrid optical receiver constructed with these amplifiers has open eye diagrams at 32 Gbit/s and a 1*10/sup -9/ error rate with -23.7 dBm of incident power.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"A 144 GHz InP/InGaAs composite collector heterostructure bipolar transistor\",\"authors\":\"A. Feygenson, R. Hamm, P. Smith, M. Pinto, R. Montgomery, R. D. Yadvish, H. Temkin\",\"doi\":\"10.1109/IEDM.1992.307312\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We describe a composite collector InP/InGaAs heterostructure bipolar transistor with f/sub T/=144 GHz and f/sub max/=81 GHz. The breakdown voltage BV/sub CEO/ is greater than 5V and output conductance is essentially independent of the collector voltage. This combination of performance characteristics is obtained with a carefully optimized collector structure. A monolithic transimpedance amplifier based on composite collector transistors has a bandwidth of 28 GHz and gain of 40 dB Omega . A hybrid optical receiver constructed with these amplifiers has open eye diagrams at 32 Gbit/s and a 1*10/sup -9/ error rate with -23.7 dBm of incident power.<<ETX>>\",\"PeriodicalId\":287098,\"journal\":{\"name\":\"1992 International Technical Digest on Electron Devices Meeting\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 International Technical Digest on Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1992.307312\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 International Technical Digest on Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1992.307312","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 16

摘要

描述了一种f/sub T/=144 GHz, f/sub max/=81 GHz的复合集电极InP/InGaAs异质结构双极晶体管。击穿电压BV/sub CEO/大于5V，输出电导基本上与集电极电压无关。这种性能特征的组合是通过精心优化的集热器结构获得的。基于复合集电极晶体管的单片跨阻放大器带宽为28 GHz，增益为40 dB ω。使用这些放大器构建的混合光接收器具有32 Gbit/s的开眼图和1*10/sup -9/错误率，入射功率为-23.7 dBm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A 144 GHz InP/InGaAs composite collector heterostructure bipolar transistor

We describe a composite collector InP/InGaAs heterostructure bipolar transistor with f/sub T/=144 GHz and f/sub max/=81 GHz. The breakdown voltage BV/sub CEO/ is greater than 5V and output conductance is essentially independent of the collector voltage. This combination of performance characteristics is obtained with a carefully optimized collector structure. A monolithic transimpedance amplifier based on composite collector transistors has a bandwidth of 28 GHz and gain of 40 dB Omega . A hybrid optical receiver constructed with these amplifiers has open eye diagrams at 32 Gbit/s and a 1*10/sup -9/ error rate with -23.7 dBm of incident power.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1992 International Technical Digest on Electron Devices Meeting

自引率

0.00%

发文量