具有低导通电阻的SiC功率器件，用于快速开关应用

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856809

P. Friedrichs, H. Mitlehner, K. Dohnke, D. Peters, R. Schorner, U. Weinert, E. Baudelot, D. Stephani

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引用次数: 54

摘要

碳化硅开关器件与硅器件相比具有优越的性能。高击穿电压下的低比导通电阻被认为是SiC功率开关器件最突出的特点。在本文中，能够阻断1800 V的mosfet和jfet的比导通电阻分别为47 m/spl Omega/ cm/sup 2/和14.5 m/spl Omega/ cm/sup 2/。，进行了讨论。然而，还有其他优势使SiC器件对系统设计人员具有吸引力。作者介绍了6H-SiC MOSFET反向二极管的快速恢复(Q/sub rr/ 30 nC, t/sub rr/ 20 ns)和垂直vjfet的快速开关和短路能力(1 ms)。最后，对未来的碳化硅开关器件进行了展望。

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SiC power devices with low on-resistance for fast switching applications

Silicon carbide switching devices exhibit superior properties compared to silicon devices. Low specific on-resistance for high breakdown voltages is believed to be the most outstanding feature of SiC power switching devices. In this paper, MOSFETs and JFETs capable to block 1800 V with a specific on-resistance of 47 m/spl Omega/ cm/sup 2/ and 14.5 m/spl Omega/ cm/sup 2/, resp., are discussed. However, there are additional advantages making SiC devices attractive for the system designer. The authors present fast recovery of the 6H-SiC MOSFET reverse diode (Q/sub rr/ 30 nC, t/sub rr/ 20 ns) and fast switching as well as short circuit capability (1 ms) of vertical VJFETs. Finally, a short outlook to future SiC switching devices is given.

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12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

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