用TLP技术分析静电放电对有机薄膜晶体管的影响

2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-09-26 DOI:10.1109/IRPS.2016.7574607

N. Wrachien, M. Barbato, A. Cester, A. Rizzo, G. Meneghesso, R. D'Alpaos, G. Turatti, G. Generali, M. Muccini

{"title":"用TLP技术分析静电放电对有机薄膜晶体管的影响","authors":"N. Wrachien, M. Barbato, A. Cester, A. Rizzo, G. Meneghesso, R. D'Alpaos, G. Turatti, G. Generali, M. Muccini","doi":"10.1109/IRPS.2016.7574607","DOIUrl":null,"url":null,"abstract":"We analyzed the effects of Electrostatic Discharge events on large area high voltage Organic Thin Film Transistors, using the transmission line pulsing technique. These transistors survived ESD events exceeding 500V. A partial dielectric breakdown occurred at voltage higher tan 600V. Small mobility and threshold voltage variations are observed, prior to breakdown.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Analysis of ESD effects on organic thin-film-transistors by means of TLP technique\",\"authors\":\"N. Wrachien, M. Barbato, A. Cester, A. Rizzo, G. Meneghesso, R. D'Alpaos, G. Turatti, G. Generali, M. Muccini\",\"doi\":\"10.1109/IRPS.2016.7574607\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We analyzed the effects of Electrostatic Discharge events on large area high voltage Organic Thin Film Transistors, using the transmission line pulsing technique. These transistors survived ESD events exceeding 500V. A partial dielectric breakdown occurred at voltage higher tan 600V. Small mobility and threshold voltage variations are observed, prior to breakdown.\",\"PeriodicalId\":172129,\"journal\":{\"name\":\"2016 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2016.7574607\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2016.7574607","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

利用传输线脉冲技术分析了静电放电事件对大面积高压有机薄膜晶体管的影响。这些晶体管能在超过500V的ESD事件中存活。在高于600V的电压下发生部分介质击穿。在击穿之前，观察到小的迁移率和阈值电压变化。

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Analysis of ESD effects on organic thin-film-transistors by means of TLP technique

We analyzed the effects of Electrostatic Discharge events on large area high voltage Organic Thin Film Transistors, using the transmission line pulsing technique. These transistors survived ESD events exceeding 500V. A partial dielectric breakdown occurred at voltage higher tan 600V. Small mobility and threshold voltage variations are observed, prior to breakdown.

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2016 IEEE International Reliability Physics Symposium (IRPS)

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