半导体失效分析SPM技术的发展

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI:10.1109/IPFA.2016.7564316

Wanxin Sun

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引用次数: 0

摘要

随着电路复杂性的增加和器件尺寸的缩小，失效分析(FA)在确定根本原因从而提高良率方面发挥着越来越重要的作用。扫描探针显微镜(SPM)已广泛应用于半导体FA实验室。随着器件尺寸的缩小，对原子力显微镜技术提出了更高的挑战。在本文中，我们将讨论这些挑战，并报告我们在解决这些挑战方面的最新进展，包括提高空间分辨率和检测灵敏度。

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Developments in SPM technologies for semiconductor failure analysis

With the increase in circuitry complexity and shrinkage in device dimensions, failure analysis (FA) plays a more important role in identifying root cause and thus in yield enhancement. Scanning probe microscopy (SPM) has been extensively used in semiconductor FA labs. With the shrinkage in device dimensions, higher challenges are casted on AFM technology. In this article, we will discuss the challenges and report our recent progress in tackling them, including improving spatial resolution and detection sensitivity.

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2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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