K. Rebibis, G. Capuz, R. Daily, C. Gerets, F. Duval, W. Teng, H. Struyf, R. A. Miller, G. Beyer, E. Beyne, B. Swinnen
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引用次数: 4
摘要
推动摩尔定律极限的需求和挑战使得3D IC堆叠辐射出mpt(材料,工艺和工具)的压力,以跟上技术的发展。围绕tsv、微凸点和薄晶圆/模具构建的3D IC架构设计是展示的中心,其中mpt必须符合并且可行,才能成为支撑铸件的一部分。下填充的主要目的是为微凸起提供机械稳定性,并在3D堆栈发送包装之前防止模具之间产生的间隙之间的水分。在应用下填材料时,必须考虑和解决三维堆积的一些复杂性。在表征下填料的过程中,必须考虑诸如堆积选项die -to- die (D2D)或die -to- wafer (D2W)、要堆叠的模具厚度(~50 um模具厚度)、要使用的热压缩键合参数以及下填料对不同工艺参数的行为等复杂性。
Developing underfill process in screening of no-flow underfill and wafer-applied underfill materials for 3D stacking
The demands and challenges in pushing the limits of Moore's Law made the 3D IC stacking radiate the pressure for MPTs (materials, processes and tools) in keeping up with the technology. The 3D IC architecture design built around the TSVs, micro-bumps and thinned wafers/dies is the center of the show, of which the MPTs must conform and be viable to be part of the supporting cast. Underfilling's main objectives is to provide the mechanical stability for micro-bumps and prevents moisture between the resulting gap between dies before the 3D stack is sent for packaging. With several complexities in 3D stacking had to be considered and addressed in applying the underfill materials. Complexities such as the stacking options Die-to-Die (D2D) or Die-to-Wafer (D2W), the thicknesses of the dies to be stacked (~50 um die thickness), the thermo-compression bonding parameters to be used and the behavior of the underfill materials to the different process parameters had to considered during the characterization process of underfills.