快瞬态下GGNMOS器件正向恢复分析

2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2018-09-01 DOI:10.23919/EOS/ESD.2018.8509788

G. Cretu, F. Magrini, Friedrich zur Nieden, K. Esmark, S. Decker

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引用次数: 1

摘要

以GGNMOS器件为载体，比较了在快速瞬态事件下分析器件行为的不同方法(CDM、CCTLP、vf-TLP、TCAD混合模式模拟)。边坡是影响破坏模式的关键参数。讨论了这些方法的必要性和优缺点。

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Analysis of forward recovery in GGNMOS devices under fast transients

A GGNMOS device is presented as a vehicle to compare different methods of analyzing the device behavior under fast transient events (CDM, CCTLP, vf-TLP, TCAD mixed mode simulations). The slope developed as a key parameter for the failure mode. The necessity along with the advantages and disadvantages of these methods are discussed.

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来源期刊

2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)

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