无掺杂的CMOS:用于高温应用的中隙肖特基势垒纳米线场效应晶体管

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2011-10-13 DOI:10.1109/ESSDERC.2011.6044184

Frank Wessely, Tillmann A. Krauss, U. Schwalke

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引用次数: 3

摘要

本文报道了一种可用于高温环境的基于纳米线的场效应器件结构(NWFET)。我们的器件具有高的温度稳定性和低的关机电流。通过改变源极/漏极偏极性，可以调节nw器件的电气特性，无论在特定应用中是否需要最低可能的泄漏电流或最大输出电流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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CMOS without doping: Midgap Schottky-barrier nanowire field-effect-transistors for high-temperature applications

In this paper we report on a newly developed nanowire based field-effect device-architecture (NWFET) that can be used in high temperature environments. Our devices posess both high temperature stability and low OFF-state current. By changes in source/drain bias-polarity the electrical properties of the NW-devices can be tuned, whether the lowest possible leakage current, or maximum output current is desirable in a specific application.

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2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)

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