NAND快闪存储器中隧道氮化物的缩小:氮化物的选择和可靠性

1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual Pub Date : 1997-04-08 DOI:10.1109/RELPHY.1997.584220

Jonghan Kim, Jungdal Choi, W. Shin, Dong Jun Kim, H. Kim, K. M. Mang, Sunghoon Ahn, O. Kwon

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引用次数: 24

摘要

研究了可制造的炉生长氮化氧工艺的选择和隧道氧化垢的可靠性问题。随着氧化物厚度的减小，与传统的干氧化物相比，隧道氮化氧的循环寿命、读取寿命和程序干扰特性都得到了改善。

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Scaling down of tunnel oxynitride in NAND flash memory: oxynitride selection and reliabilities

The selection of a manufacturable furnace-grown oxynitride process and reliability issues of the scaled tunnel oxide are examined. As the oxide thickness is scaled down, the cycling endurance, read life time and program disturb characteristics in a NAND flash memory with the tunnel oxynitride are improved compared to the conventional dry oxide.

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1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual

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