非易失性存储器技术——今天和未来

2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI:10.1109/IPFA.2006.250989

Chih-Yuan Lu, T. Lu, Rich Liu

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引用次数: 24

摘要

尽管NOR和NAND闪存都有很强的缩放限制，但延续摩尔定律的解决方案也在不断涌现。对于NOR闪存，2位/单元NROM, BE-SONOS和相变硫族存储器有望扩展到35nm节点以下。对于NAND闪存，新的氮化物存储器件如TANOS和BE-SONOS是< 30 nm器件的候选器件

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Non-Volatile Memory Technology-Today and Tomorrow

Despite strong scaling limitations for both NOR and NAND flash memories, solutions to continue the Moore's law are also emerging. For NOR flash memory, 2-bit/cell NROM, BE-SONOS and phase-change chalcogenide memory show promise to scale below 35nm node. For NAND flash memory, new nitride storage devices such as TANOS and BE-SONOS are candidates for < 30 nm devices

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2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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