{"title":"钨作为CMOS兼容催化剂，用于硅的金属辅助化学蚀刻，以创建2D和3D纳米结构","authors":"O. Hildreth, C. Álvarez, C. Wong","doi":"10.1109/ECTC.2010.5490739","DOIUrl":null,"url":null,"abstract":"This paper demonstrates the use of tungsten as a viable, low cost catalyst for Metal-assisted Chemical Etching (MaCE) of silicon to create high aspect ratio nanostructures in silicon. The effect of etchant composition and etching time is reported along with Scanning Electron Microscope (SEM) and Atomic Force Microscopy (AFM) images confirming that tungsten acted as a catalyst for MaCE.","PeriodicalId":429629,"journal":{"name":"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Tungsten as a CMOS compatible catalyst for the Metal-assisted Chemical Etching of silicon to create 2D and 3D nanostructures\",\"authors\":\"O. Hildreth, C. Álvarez, C. Wong\",\"doi\":\"10.1109/ECTC.2010.5490739\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper demonstrates the use of tungsten as a viable, low cost catalyst for Metal-assisted Chemical Etching (MaCE) of silicon to create high aspect ratio nanostructures in silicon. The effect of etchant composition and etching time is reported along with Scanning Electron Microscope (SEM) and Atomic Force Microscopy (AFM) images confirming that tungsten acted as a catalyst for MaCE.\",\"PeriodicalId\":429629,\"journal\":{\"name\":\"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECTC.2010.5490739\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.2010.5490739","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Tungsten as a CMOS compatible catalyst for the Metal-assisted Chemical Etching of silicon to create 2D and 3D nanostructures
This paper demonstrates the use of tungsten as a viable, low cost catalyst for Metal-assisted Chemical Etching (MaCE) of silicon to create high aspect ratio nanostructures in silicon. The effect of etchant composition and etching time is reported along with Scanning Electron Microscope (SEM) and Atomic Force Microscopy (AFM) images confirming that tungsten acted as a catalyst for MaCE.
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