基于CMOS技术的数字阵列雷达1 ~ 4GHz三向射频放大器

2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM) Pub Date : 2020-10-23 DOI:10.1109/ICICM50929.2020.9292302

Bowen Wu, Zongming Duan, Yan Wang, Wei Lv

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引用次数: 0

摘要

提出了一种基于0.18um技术的1 ~ 4ghz三向射频放大器，用于数字阵列雷达。当电路在TX和RX模式下工作时，在RF端口实现了1到4 GHz的宽带匹配。该电路由一个可变增益低噪声放大器、一个驱动放大器和一个单极双掷开关组成。电路增益为7.6 ~ 14.2 dB，噪声系数小于5.3 dB, RX输入P-1dB压缩点为−3dBm@2.4GHz, TX输出P-1dB压缩点为11.4dBm@2.4GHz，增益为9.9dB，芯片尺寸为2.25mm*0.97mm(带衬垫)。

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A 1∼4GHz Tri-Directional RF Amplifier Based on CMOS Technology for Digital Array Radars

This paper presents A 1 to 4 GHz tri-directional RF amplifier based on 0.18um technology for digital array radar applications. A wideband matching from 1 to 4 GHz at RF port is achieved while the circuit is working in both TX and RX mode. The circuits consist of a variable gain low noise amplifier, a drive amplifier and a single pole double throw switch. The circuit shows gain from 7.6 to 14.2 dB, and the noise figure is less than 5.3 dB with −3dBm@2.4GHz input P-1dB compression point in RX, while gain of 9.9dB and output P-1dB compression point is 11.4dBm@2.4GHz in TX. The chip size is 2.25mm*0.97mm (with pads).

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来源期刊

2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM)

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