高性能高可靠0.18/spl mu/m双栅CMOS的晶粒生长控制栅电极工程

1997 Symposium on VLSI Technology Pub Date : 1997-06-10 DOI:10.1109/VLSIT.1997.623718

Shimizu, Kuroi, Sayama, Furukawa, Nishida, Inoue, Inuishi, Nishimura

{"title":"高性能高可靠0.18/spl mu/m双栅CMOS的晶粒生长控制栅电极工程","authors":"Shimizu, Kuroi, Sayama, Furukawa, Nishida, Inoue, Inuishi, Nishimura","doi":"10.1109/VLSIT.1997.623718","DOIUrl":null,"url":null,"abstract":"Advanced gate electrode engineering is demonstrated to overcome the key issues of dual gate CMOS with thin gate oxide film. Using the small-grain-size polysilicon for the gate electrode, not only the suppression of gate depletion but also the stability of threshold voltage can be achieved as well as the improvement of the gate oxide integrity. Furthermore this successful implementation into 0.18pm CMOS is demonstrated with high performance and high reliability.","PeriodicalId":414778,"journal":{"name":"1997 Symposium on VLSI Technology","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Gate Electrode Engineering By Control Of Grain Growth For High Performance And High Reliable 0.18/spl mu/m Dual Gate CMOS\",\"authors\":\"Shimizu, Kuroi, Sayama, Furukawa, Nishida, Inoue, Inuishi, Nishimura\",\"doi\":\"10.1109/VLSIT.1997.623718\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Advanced gate electrode engineering is demonstrated to overcome the key issues of dual gate CMOS with thin gate oxide film. Using the small-grain-size polysilicon for the gate electrode, not only the suppression of gate depletion but also the stability of threshold voltage can be achieved as well as the improvement of the gate oxide integrity. Furthermore this successful implementation into 0.18pm CMOS is demonstrated with high performance and high reliability.\",\"PeriodicalId\":414778,\"journal\":{\"name\":\"1997 Symposium on VLSI Technology\",\"volume\":\"54 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-06-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.1997.623718\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1997.623718","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

摘要

先进的栅极工程技术克服了薄栅氧化膜双栅CMOS的关键问题。采用小晶粒多晶硅作为栅极电极，不仅可以抑制栅极损耗，还可以实现阈值电压的稳定性，提高栅极氧化物的完整性。此外，在0.18pm CMOS中成功实现具有高性能和高可靠性。

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Gate Electrode Engineering By Control Of Grain Growth For High Performance And High Reliable 0.18/spl mu/m Dual Gate CMOS

Advanced gate electrode engineering is demonstrated to overcome the key issues of dual gate CMOS with thin gate oxide film. Using the small-grain-size polysilicon for the gate electrode, not only the suppression of gate depletion but also the stability of threshold voltage can be achieved as well as the improvement of the gate oxide integrity. Furthermore this successful implementation into 0.18pm CMOS is demonstrated with high performance and high reliability.

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1997 Symposium on VLSI Technology

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