350v载流子注入场效应晶体管(CIFET)具有极低的导通电阻和高的开关速度

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 Pub Date : 1995-05-23 DOI:10.1109/ISPSD.1995.515080

Y. Sugawara, M. Nemoto, Y. Nemoto, H. Akakawa

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引用次数: 0

摘要

为了实现低导通电压和高开关速度，提出了一种新型器件——载流子注入场效应晶体管(CIFET)。所制备的350 V侧CIFET在100 a /cm/sup 2/下具有低于0.8 V的低导通电压，这是igbt、est和mct难以实现的。电子辐照使其下降时间降至0.2 /spl mu/s左右。在去除MOS栅极电压之前，早期去除注入的栅极电流(大于5 /spl mu/s)可将下降时间缩短至约70 ns。

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350 V carrier injection field effect transistor (CIFET) with very low on-resistance and high switching speed

To realize low on-state voltage and high switching speed, a new device, a CIFET (Carrier Injection Field Effect Transistor), is proposed. The fabricated 350 V lateral CIFET has a low on-state voltage of less than 0.8 V at 100 A/cm/sup 2/, which is difficult to be achieved by IGBTs, ESTs and MCTs. Its fall time is reduced to about 0.2 /spl mu/s by electron irradiation. Early removal of the injected gate current (more than 5 /spl mu/s) before removing the MOS gate voltage shortens the fall time to about 70 ns.

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Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95

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