正偏置温度不稳定性诱导P+ Poly/SiON pMOSFET产生正电荷

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI:10.1109/IRPS.2012.6241939

Hokyung Park, P. Nicollian, V. Reddy

{"title":"正偏置温度不稳定性诱导P+ Poly/SiON pMOSFET产生正电荷","authors":"Hokyung Park, P. Nicollian, V. Reddy","doi":"10.1109/IRPS.2012.6241939","DOIUrl":null,"url":null,"abstract":"We have investigated positive bias temperature instability characteristics in P+ Poly/SiON pMOSFET's. Similar to NBTI, PBTI also shows positive charge generation. From the LV-SILC characteristics, we observed Dit generation at both the Poly/SiON and Si/SiON interfaces after PBTI stress, with Dit generation at the Poly/SiON interface influencing trap creation at the Si/SiON interface.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Positive bias temperature instability induced positive charge generation in P+ Poly/SiON pMOSFET's\",\"authors\":\"Hokyung Park, P. Nicollian, V. Reddy\",\"doi\":\"10.1109/IRPS.2012.6241939\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have investigated positive bias temperature instability characteristics in P+ Poly/SiON pMOSFET's. Similar to NBTI, PBTI also shows positive charge generation. From the LV-SILC characteristics, we observed Dit generation at both the Poly/SiON and Si/SiON interfaces after PBTI stress, with Dit generation at the Poly/SiON interface influencing trap creation at the Si/SiON interface.\",\"PeriodicalId\":341663,\"journal\":{\"name\":\"2012 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2012.6241939\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2012.6241939","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 9

摘要

我们研究了P+ Poly/SiON pMOSFET的正偏置温度不稳定性。与NBTI类似，PBTI也能产生正电荷。从LV-SILC特性来看，我们观察到了PBTI应力作用下Poly/SiON和Si/SiON界面上Dit的生成，其中Poly/SiON界面上Dit的生成影响了Si/SiON界面上陷阱的产生。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Positive bias temperature instability induced positive charge generation in P+ Poly/SiON pMOSFET's

We have investigated positive bias temperature instability characteristics in P+ Poly/SiON pMOSFET's. Similar to NBTI, PBTI also shows positive charge generation. From the LV-SILC characteristics, we observed Dit generation at both the Poly/SiON and Si/SiON interfaces after PBTI stress, with Dit generation at the Poly/SiON interface influencing trap creation at the Si/SiON interface.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2012 IEEE International Reliability Physics Symposium (IRPS)

自引率

0.00%

发文量