500v p沟道和n沟道vdmos - light晶体管的理论和实验研究

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 Pub Date : 1995-05-23 DOI:10.1109/ISPSD.1995.515042

V. Parthasarathy, T. Chow

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引用次数: 11

摘要

本文首次提出了n通道vdmos - light的静态和动态性能，研究了几个关键设计参数的函数。本文描述了一种减少该装置和其他类似混合装置中的回跳的新方法。实验观察到n通道vdmos - light的IGBT阳极在电阻关断过程中有独特的反向注入电流，并通过数值模拟加以阐明。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Theoretical and experimental investigation of 500 V p- and n-channel VDMOS-LIGBT transistors

Static and dynamic performance of the n-channel VDMOS-LIGBT, presented for the first time in this work, has been studied as a function of a few critical design parameters. A novel method for minimizing snap-back in this device and other similar hybrid devices is described. A unique back-injection of current out of the IGBT anode of the n-channel VDMOS-LIGBT during resistive turn-off has been observed experimentally and is elucidated using numerical simulations.

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Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95

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