利用Ti衬底和Ar溅射蚀刻在CVD-TiN薄膜上形成高度织构的Cu膜，用于damese互连

Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247) Pub Date : 1999-05-26 DOI:10.1109/IITC.1999.787095

M. Sekiguchi, H. Sato, T. Harada, R. Etoh

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引用次数: 3

摘要

在沉积Ti之前，通过使用(002)取向溅射Tiunderlayer和Ar溅射蚀刻，实现了Cu薄膜在cvd - tin薄膜上的高(111)取向织体和高润湿性。该工艺增强了非晶CVD-TiN薄膜的(111)定向结晶。结果表明，Cu薄膜的< 111 >织构和润湿性与Cu在Ta薄膜上的织构和润湿性相同。具有大马士革结构的Cu薄膜也表现出高度(111)取向的织构

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Highly <111> textured Cu film formation on CVD-TiN film by Ti underlayer and Ar sputter etch for damascene interconnection

Highly (111)-oriented texture and high wetting of Cu films on CVD-TiN films are achieved by use of a (002)-oriented sputtered Ti underlayer and an Ar sputter etch before Ti deposition. This process enhances (111)-oriented crystallization of the amorphous CVD-TiN film. As a result, 〈111〉 texture and wetting of Cu films are as same as those of Cu on Ta films. Cu films with a damascene structure also show a highly (111)-oriented texture

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Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247)

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