新型SiGe/Si异质结功率MOS器件

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856784

Ping Li, Yajuan Su, Mengsi You, Xuening Li

{"title":"新型SiGe/Si异质结功率MOS器件","authors":"Ping Li, Yajuan Su, Mengsi You, Xuening Li","doi":"10.1109/ISPSD.2000.856784","DOIUrl":null,"url":null,"abstract":"Two types of novel power MOS devices with SiGe/Si heterojunctions are proposed and verified for the first time. The SiGe source RMOS has the characteristics of BV/sub ds/=BV/sub ce0/=BV/sub cb0/ which implies that the performance limitation of a Si RMOS can be overcome. The SiGe anode LIGBT has better performance than the SINFET, but does not have the shortcomings of the latter.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Novel power MOS devices with SiGe/Si heterojunctions\",\"authors\":\"Ping Li, Yajuan Su, Mengsi You, Xuening Li\",\"doi\":\"10.1109/ISPSD.2000.856784\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two types of novel power MOS devices with SiGe/Si heterojunctions are proposed and verified for the first time. The SiGe source RMOS has the characteristics of BV/sub ds/=BV/sub ce0/=BV/sub cb0/ which implies that the performance limitation of a Si RMOS can be overcome. The SiGe anode LIGBT has better performance than the SINFET, but does not have the shortcomings of the latter.\",\"PeriodicalId\":260241,\"journal\":{\"name\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2000.856784\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856784","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 9

摘要

首次提出并验证了两种新型SiGe/Si异质结功率MOS器件。SiGe源RMOS具有BV/sub ds/=BV/sub ce0/=BV/sub cb0/的特性，这意味着可以克服Si RMOS的性能限制。SiGe阳极light具有比SINFET更好的性能，但又没有后者的缺点。

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Novel power MOS devices with SiGe/Si heterojunctions

Two types of novel power MOS devices with SiGe/Si heterojunctions are proposed and verified for the first time. The SiGe source RMOS has the characteristics of BV/sub ds/=BV/sub ce0/=BV/sub cb0/ which implies that the performance limitation of a Si RMOS can be overcome. The SiGe anode LIGBT has better performance than the SINFET, but does not have the shortcomings of the latter.

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12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

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