叠层三维硅的出现及其对微电子系统集成的影响

J. Carson
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引用次数: 21

摘要

堆叠3D硅已经在政府以及公共和私人投资者的大量投资下进行了多年的开发。该技术的批量生产现已到位,并为堆叠3D硅组件和产品的设计人员提供代工服务。堆叠3D硅已经对微电子系统和与之集成的产品产生了重大影响。给出的例子包括固态数据记录器、数字信号处理器、大规模并行处理器、人工神经网络、成像处理和成像传感器。制造和成本问题的确定和讨论,以及目前的状况和预测表明,随着产量的增加,将堆叠3D硅集成到标准产品中不需要显着的溢价。堆叠3D硅的性能优势非常大:当设计用于3D的集成电路时,超高的规模密度导致速度和功耗降低数百到数千倍。论文最后以即将到来的下一代3D堆叠硅的图片收尾:10-1000层超薄、低功耗电路,在单个立方体中包含1000层间互连的整个系统。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The emergence of stacked 3D silicon and its impact on microelectronics systems integration
Stacked 3D silicon has been under development for a number of years at a substantial level of investment on the part of Government as well as public and private investors. Volume manufacturing of this technology is now in place and foundry services are provided to designers of Stacked 3D silicon components and products. Stacked 3D silicon has already had a major impact on microelectronics systems and products into which it has been integrated. Examples given include solid state data recorders, digital signal processors, massively parallel processors, artificial neural networks, imaging processing, and imaging sensors. Manufacturing and cost issues are identified and discussed along with present status and projections showing that, as volumes rise, no significant premium will be required to incorporate Stacked 3D Silicon into standard products. The performance advantages of Stacked 3D silicon are very large: the ultra-high scale density results in factors of hundreds to thousands in both speed and power when ICs are designed for 3D. The paper concludes with a picture of the coming next generation 3D stacked silicon: 10-1000 layers of ultra-thin, low power circuits with 1000s of inter-layer interconnect comprising entire systems in a single cube.
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