在LILT条件下1-MeV电子辐照对III-V//Si影响的原位测量

2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC) Pub Date : 2020-11-01 DOI:10.1109/REDW51883.2020.9325850

Karim Medjoubi, R. Cariou, L. Vauche, E. Veinberg-Vidal, C. Jany, Cedric Rostaing, Vincent Amalbert, F. Chabuel, B. Boizot

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引用次数: 0

摘要

在这项研究中，我们研究了III-V/Si太阳能电池技术在空间应用中的潜力。本文给出了在NIRT和LILT条件下1mev电子辐照前后的实验结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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In-Situ Measurement of the Effect of 1-MeV Electrons Irradiation on III-V//Si at LILT Conditions

In this study, we investigate the potential of III-V/Si solar cell technology for space applications. We present here the experimental results before and after 1 MeV electrons irradiation at NIRT and LILT conditions.

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来源期刊

2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC)

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