体接地SOI nmosfet中的局部浮体效应

1997 IEEE International SOI Conference Proceedings Pub Date : 1997-10-06 DOI:10.1109/SOI.1997.634915

Y. Tseng, W.M. Huang, B. Ikegami, D. Diaz, J. Ford, J. Woo

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引用次数: 4

摘要

只提供摘要形式。本文研究了本体接地h栅极SOI mosfet中扭结效应和低频噪声超调的宽度依赖性。这些现象与本征体阻抗引起的局部浮体效应有关。此外，SOI中独特的低频噪声超调可以作为评估身体接触效率的敏感工具。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Local floating body effect in body-grounded SOI nMOSFETs

Summary form only given. In this paper, the width dependence of the kink effect and the low frequency noise overshoot in the body grounded H-gate SOI MOSFETs have been studied. These phenomena are related to the local floating body effects resulting from the intrinsic body impedance. Also, it is suggested that the unique low frequency noise overshoot in SOI can be a sensitive tool to evaluate the efficiency of the body contact.

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1997 IEEE International SOI Conference Proceedings

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