功率器件高效热管理GaN/SiC/金刚石结构的制备

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI:10.1109/LTB-3D53950.2021.9598453

R. Kagawa, K. Kawamura, Y. Sakaida, Sumito Ouchi, Hiroki Uratani, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa, Jianbo Liang

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引用次数: 1

摘要

gan - hemt的自热是影响器件性能和可靠性的一个严重问题。因此，金刚石具有极高的导热性，是hemt应用中最有前途的导热材料。因此，我们采用表面活化键合的方法在金刚石衬底上制备gan - hemt。

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Fabrication of GaN/SiC/diamond structure for efficient thermal management of power device

The self-heating of GaN-HEMTs is a serious issue in terms of the device performance and reliability. Therefore, diamond is the most promising candidate as a heat spreader material for HEMTs application because of its extremely high thermal conductivity. Therefore, we fabricate GaN-HEMTs on diamond substrate by using surface activated bonding method.

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2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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