eeprom存储单元的浮动栅极的意外电荷损失

IEEE International Workshop on Memory Technology, Design and Testing, Pub Date : 1996-08-13 DOI:10.1109/MTDT.1996.782498

R. Allinger, M. Kerber, H.J. Mattausch, H. Braun

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引用次数: 2

摘要

提出了一种新的泄漏效应，它破坏了EEPROM存储单元浮动门上的数据保留。这种效应是偶然发现的，因为高温烘烤后的擦除操作导致阈值电压下降，而不是预期的增加。给出了负责电荷损失机制的一种可能的物理解释，并得到了一些额外测量结果的支持。

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Unexpected charge losses from the floating gates of eeprom memory cells

A new leakage effect, which undermines data retention on the floating gates of EEPROM memory cells, is presented. The effect was uncovered by chance, because an erase operation after high temperature bake led to the surprising result of a threshold voltage decrease, instead of the expected increase. A possible physical explanation for the responsible charge loss mechanism is given and is supported by a number of additional measurements.

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IEEE International Workshop on Memory Technology, Design and Testing,

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