NLDEMOS在0.13μm SOI CMOS技术中的热载流子可靠性

2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI:10.1109/IPFA.2006.251002

D. Lachenal, Y. Rey-Tauriac, L. Boissonnet, B. Reynard, A. Bravaix

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引用次数: 2

摘要

本文研究了采用0.13μm SOI CMOS技术的NLDEMOS晶体管的可靠性。不同栅极长度的热载流子注入可靠性试验显示出两种不同的退化机制。斜向等电位线引起的短重叠电流路径的改变和低电压下栅极边缘下垂直电场的增大，可以将Nit界面陷阱的产生与源侧注入区分出来

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Hot-Carrier Reliability of NLDEMOS in 0.13μm SOI CMOS Technology

This paper presents reliability investigations in NLDEMOS transistor in 0.13μm SOI CMOS technology. Reliability tests under hot carrier injections (HCI) for different gate-lengths show two different degradation mechanisms. The modification of current path with short overlap (Olap) due to oblique equi-potential lines and the increase in the vertical electrical field under the gate edge at low V g lead to distinguish Nit interface trap generation from the source side injection

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2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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