改进了记忆的不可修复性判断和经济修复方案

Hsing-Chung Liang, LeeAnn Tzeng
{"title":"改进了记忆的不可修复性判断和经济修复方案","authors":"Hsing-Chung Liang, LeeAnn Tzeng","doi":"10.1109/MTDT.2006.18","DOIUrl":null,"url":null,"abstract":"This paper introduces a novel procedure of identifying better representatives of faulty cells in a memory map to help judge unrepair ability and provide economic repair recommendation. These representative faulty cells, called leading elements (LE), are classified into four primary types based on their characteristics. Three specific pairs of initially identified LE are extracted for further operations, which are replacing certain LE with other better representatives and assigning the cross point faults between two certain LE as new LE. All steps of the procedure are analyzed in sequence with verification, clearly indicating that the identified LE represent both the more exact thresholds for judging unrepairability and usually the most economic repair solutions. Experiments on many example maps show that the procedure can be fast in searching 7% more LE and be applicable to accumulate data for redundancy planning afterwards","PeriodicalId":320365,"journal":{"name":"2006 IEEE International Workshop on Memory Technology, Design, and Testing (MTDT'06)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improved representatives for unrepairability judging and economic repair solutions of memories\",\"authors\":\"Hsing-Chung Liang, LeeAnn Tzeng\",\"doi\":\"10.1109/MTDT.2006.18\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper introduces a novel procedure of identifying better representatives of faulty cells in a memory map to help judge unrepair ability and provide economic repair recommendation. These representative faulty cells, called leading elements (LE), are classified into four primary types based on their characteristics. Three specific pairs of initially identified LE are extracted for further operations, which are replacing certain LE with other better representatives and assigning the cross point faults between two certain LE as new LE. All steps of the procedure are analyzed in sequence with verification, clearly indicating that the identified LE represent both the more exact thresholds for judging unrepairability and usually the most economic repair solutions. Experiments on many example maps show that the procedure can be fast in searching 7% more LE and be applicable to accumulate data for redundancy planning afterwards\",\"PeriodicalId\":320365,\"journal\":{\"name\":\"2006 IEEE International Workshop on Memory Technology, Design, and Testing (MTDT'06)\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-08-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Workshop on Memory Technology, Design, and Testing (MTDT'06)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MTDT.2006.18\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Workshop on Memory Technology, Design, and Testing (MTDT'06)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTDT.2006.18","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文介绍了一种识别记忆图中故障细胞代表的新方法,以帮助判断不可修复能力并提供经济修复建议。这些有代表性的缺陷细胞被称为先导元件(lead element, LE),根据其特征分为四种主要类型。提取初始识别的三对特定的LE,用其他更好的代表替换某些LE,并将两个特定LE之间的交叉点故障分配为新LE。程序的所有步骤都按顺序进行了分析,并进行了验证,清楚地表明所识别的LE既代表了判断不可修复性的更精确阈值,又代表了通常最经济的修复解决方案。在多个示例图上的实验表明,该方法可以快速搜索7%以上的LE,并适用于后续冗余规划的数据积累
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Improved representatives for unrepairability judging and economic repair solutions of memories
This paper introduces a novel procedure of identifying better representatives of faulty cells in a memory map to help judge unrepair ability and provide economic repair recommendation. These representative faulty cells, called leading elements (LE), are classified into four primary types based on their characteristics. Three specific pairs of initially identified LE are extracted for further operations, which are replacing certain LE with other better representatives and assigning the cross point faults between two certain LE as new LE. All steps of the procedure are analyzed in sequence with verification, clearly indicating that the identified LE represent both the more exact thresholds for judging unrepairability and usually the most economic repair solutions. Experiments on many example maps show that the procedure can be fast in searching 7% more LE and be applicable to accumulate data for redundancy planning afterwards
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