F. Inoue, H. Philipsen, A. Radisic, S. Armini, Y. Civale, P. Leunissen, S. Shingubara
{"title":"采用直接化学镀铜在ALD-Ru层上制备高纵横比TSV的新型种层","authors":"F. Inoue, H. Philipsen, A. Radisic, S. Armini, Y. Civale, P. Leunissen, S. Shingubara","doi":"10.1109/IITC.2012.6251660","DOIUrl":null,"url":null,"abstract":"High aspect ratio through-Si vias (2 μmφ, AR 15) have been filled without voids on coupon scale by using an electroless deposited Cu seed layer on ALD-Ru. The total Cu overburden, which is ELD and filling Cu, was about 700 nm. In addition, the electroless Cu bath showed good stability during 2 hours with controlling pH to stabilize the deposition process. These results show the feasibility of electroless deposition in TSV processing.","PeriodicalId":165741,"journal":{"name":"2012 IEEE International Interconnect Technology Conference","volume":"58 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Novel seed layer formation using direct electroless copper deposition on ALD-Ru layer for high aspect ratio TSV\",\"authors\":\"F. Inoue, H. Philipsen, A. Radisic, S. Armini, Y. Civale, P. Leunissen, S. Shingubara\",\"doi\":\"10.1109/IITC.2012.6251660\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High aspect ratio through-Si vias (2 μmφ, AR 15) have been filled without voids on coupon scale by using an electroless deposited Cu seed layer on ALD-Ru. The total Cu overburden, which is ELD and filling Cu, was about 700 nm. In addition, the electroless Cu bath showed good stability during 2 hours with controlling pH to stabilize the deposition process. These results show the feasibility of electroless deposition in TSV processing.\",\"PeriodicalId\":165741,\"journal\":{\"name\":\"2012 IEEE International Interconnect Technology Conference\",\"volume\":\"58 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Interconnect Technology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2012.6251660\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2012.6251660","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Novel seed layer formation using direct electroless copper deposition on ALD-Ru layer for high aspect ratio TSV
High aspect ratio through-Si vias (2 μmφ, AR 15) have been filled without voids on coupon scale by using an electroless deposited Cu seed layer on ALD-Ru. The total Cu overburden, which is ELD and filling Cu, was about 700 nm. In addition, the electroless Cu bath showed good stability during 2 hours with controlling pH to stabilize the deposition process. These results show the feasibility of electroless deposition in TSV processing.