采用直接化学镀铜在ALD-Ru层上制备高纵横比TSV的新型种层

F. Inoue, H. Philipsen, A. Radisic, S. Armini, Y. Civale, P. Leunissen, S. Shingubara
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引用次数: 6

摘要

利用化学沉积的Cu种子层在ALD-Ru表面制备了高纵横比(2 μmφ, ar15)的si通孔,在片状尺度上无空隙填充。Cu覆盖层总厚度约为700 nm,主要为ELD和填充Cu。另外,在控制pH稳定沉积过程的条件下,化学镀铜液在2小时内表现出良好的稳定性。这些结果表明化学沉积在TSV加工中的可行性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Novel seed layer formation using direct electroless copper deposition on ALD-Ru layer for high aspect ratio TSV
High aspect ratio through-Si vias (2 μmφ, AR 15) have been filled without voids on coupon scale by using an electroless deposited Cu seed layer on ALD-Ru. The total Cu overburden, which is ELD and filling Cu, was about 700 nm. In addition, the electroless Cu bath showed good stability during 2 hours with controlling pH to stabilize the deposition process. These results show the feasibility of electroless deposition in TSV processing.
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