基于表面电位的有机薄膜晶体管模型与C10-DNTT高性能测试设备的基准测试

2013 IEEE International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2013-03-25 DOI:10.1109/ICMTS.2013.6528164

T. Maiti, T. Hayashi, H. Mori, M. Kang, K. Takimiya, M. Miura-Mattausch, H. Mattausch

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引用次数: 6

摘要

本文提出了一种基于表面电位的有机薄膜晶体管(OTFTs)紧凑模型，该模型包括带隙内的尾阱态和深阱态，并根据高性能二萘噻吩(C10-DNTT)测试装置的测量数据进行了基准测试。该模型可以准确地描述OTFT测试结构从周到强反转的电流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Benchmarking of a surface potential based organic thin-film transistor model against C10-DNTT high performance test devices

In this paper, a surface potential based compact model for organic thin-film transistors (OTFTs) including both tail and deep trap states across the band gap is presented and benchmarked against measured data from high-performance dinaphtho thieno thiophene (C10-DNTT) based test devices. This model can accurately describe the OTFT test-structure current from week to strong inversion regime.

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来源期刊

2013 IEEE International Conference on Microelectronic Test Structures (ICMTS)

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