Cu/SiLK金属化方案中TiSiN扩散屏障的研制

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI:10.1109/IITC.2000.854275

S. Sankaran, W. Harris, G. Nuesca, E. Shaffer, S.J. Hiartin, R. Geer

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引用次数: 0

摘要

对Cu/TiSiN叠层在SiLK低k介电膜上的集成进行了扩散势垒优化和相容性研究。第一次通过测试优化了TiSiN薄膜的组成，并评估了与SiLK的工艺兼容性。使用TiSiN/SiO/ sub2 / stacks进行基线比较。二次测试评估了TiSiN/Cu/TiSiN/SiLK堆叠对Cu扩散的热稳定性和TiSiN/SiLK界面的稳定性。在高达450°C的温度下，叠层组成和界面形貌没有变化。

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Development of TiSiN diffusion barriers for Cu/SiLK metallization schemes

Diffusion barrier optimization and compatibility studies were undertaken with respect to the integration of Cu/TiSiN stacks on SiLK low-k dielectric films. First-pass testing optimized TiSiN film composition and evaluated process compatibility with SiLK. TiSiN/SiO/sub 2/ stacks were used for baseline comparisons. Second-pass testing evaluated thermal stability of TiSiN/Cu/TiSiN/SiLK stacks against Cu diffusion and the stability of the TiSiN/SiLK interface. At temperatures up to 450/spl deg/C no variations in stack composition or interfacial morphology were evidenced.

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Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)

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