利用TiN等离子体氮化技术控制新型N/ pet电压

2016 IEEE Symposium on VLSI Technology Pub Date : 2016-06-14 DOI:10.1109/VLSIT.2016.7573436

M. Togo, W. Tong, X. Zhang, D. Triyoso, J. Lian, Y. M. Randriamihja, S. Uppal, S. Dag, E. C. Silva, M. Kota, T. Shimizu, S. Patil, M. Eller, S. Samavedam

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引用次数: 1

摘要

提出了一种新的N/ fet阈值电压(Vt)控制方案。在不增加光刻步骤和性能或可靠性损失的情况下，TiN等离子体氮化可以同时将nfet和pfet的绝对Vt降低100mV。TiN等离子体氮化不需要额外的功功能金属(WFM)来控制Vt，因此允许更厚的栅极接触金属来降低栅极电阻并改善交流性能。

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Novel N/PFET Vt control by TiN plasma nitridation for aggressive gate scaling

A novel N/PFET threshold voltage (Vt) control scheme was developed for aggressive gate scaling. TiN plasma nitridation reduces absolute Vt by 100mV for both NFETs and PFETs at the same time without photolithography step increase and performance or reliability penalty. TiN plasma nitridation does not need additional work function metal (WFM) to control Vt and hence allows thicker gate contact metal for low gate resistance and improved AC performance.

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2016 IEEE Symposium on VLSI Technology

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