{"title":"一种高速低压内置电流传感器","authors":"Tsung-Chu Huang, Min-Cheng Huang, Kuen-Jong Lee","doi":"10.1109/IDDQ.1997.633020","DOIUrl":null,"url":null,"abstract":"This paper presents a high-speed low-voltage built-in current sensor. It mainly utilizes a bulk-driven current mirror as a current sensor to reduce the power supply voltage drop. Based on this technique, we develop an analytic and empirical model to design the built-in current sensor. Experimental results show that the bulk-driven built-in current sensor can have high speed and low area overhead under a low power supply voltage.","PeriodicalId":429650,"journal":{"name":"Digest of Papers IEEE International Workshop on IDDQ Testing","volume":"105 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"A high-speed low-voltage built-in current sensor\",\"authors\":\"Tsung-Chu Huang, Min-Cheng Huang, Kuen-Jong Lee\",\"doi\":\"10.1109/IDDQ.1997.633020\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a high-speed low-voltage built-in current sensor. It mainly utilizes a bulk-driven current mirror as a current sensor to reduce the power supply voltage drop. Based on this technique, we develop an analytic and empirical model to design the built-in current sensor. Experimental results show that the bulk-driven built-in current sensor can have high speed and low area overhead under a low power supply voltage.\",\"PeriodicalId\":429650,\"journal\":{\"name\":\"Digest of Papers IEEE International Workshop on IDDQ Testing\",\"volume\":\"105 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-11-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers IEEE International Workshop on IDDQ Testing\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IDDQ.1997.633020\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers IEEE International Workshop on IDDQ Testing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IDDQ.1997.633020","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper presents a high-speed low-voltage built-in current sensor. It mainly utilizes a bulk-driven current mirror as a current sensor to reduce the power supply voltage drop. Based on this technique, we develop an analytic and empirical model to design the built-in current sensor. Experimental results show that the bulk-driven built-in current sensor can have high speed and low area overhead under a low power supply voltage.