{"title":"过程仿真的几何平流算法","authors":"X. Klemenschits, S. Selberherr, L. Filipovic","doi":"10.23919/SISPAD49475.2020.9241678","DOIUrl":null,"url":null,"abstract":"An algorithm is developed, which advects a material interface analytically, according to purely geometric considerations. This algorithm is implemented in ViennaLS, a sparse level set library and its applicability to common microelectronic fabrication processes is demonstrated. A pinch-off plasma CVD process is emulated using the presented algorithm. This algorithm is compared to common advection algorithms, showing a significant improvement in accuracy, with a performance penalty of a factor of about 2 when compared to simple advection schemes and a performance benefit of a factor of 6 when compared to more sophisticated schemes.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Geometric Advection Algorithm for Process Emulation\",\"authors\":\"X. Klemenschits, S. Selberherr, L. Filipovic\",\"doi\":\"10.23919/SISPAD49475.2020.9241678\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An algorithm is developed, which advects a material interface analytically, according to purely geometric considerations. This algorithm is implemented in ViennaLS, a sparse level set library and its applicability to common microelectronic fabrication processes is demonstrated. A pinch-off plasma CVD process is emulated using the presented algorithm. This algorithm is compared to common advection algorithms, showing a significant improvement in accuracy, with a performance penalty of a factor of about 2 when compared to simple advection schemes and a performance benefit of a factor of 6 when compared to more sophisticated schemes.\",\"PeriodicalId\":206964,\"journal\":{\"name\":\"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/SISPAD49475.2020.9241678\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SISPAD49475.2020.9241678","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Geometric Advection Algorithm for Process Emulation
An algorithm is developed, which advects a material interface analytically, according to purely geometric considerations. This algorithm is implemented in ViennaLS, a sparse level set library and its applicability to common microelectronic fabrication processes is demonstrated. A pinch-off plasma CVD process is emulated using the presented algorithm. This algorithm is compared to common advection algorithms, showing a significant improvement in accuracy, with a performance penalty of a factor of about 2 when compared to simple advection schemes and a performance benefit of a factor of 6 when compared to more sophisticated schemes.