一种用于0.10 /spl mu/m铜的新型空心阴极磁控管源

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI:10.1109/IITC.2000.854274

K.A. Ashtiani, E. Klawuhn, D. Hayden, M. ow, K. B. Levy, M. Danek

{"title":"一种用于0.10 /spl mu/m铜的新型空心阴极磁控管源","authors":"K.A. Ashtiani, E. Klawuhn, D. Hayden, M. ow, K. B. Levy, M. Danek","doi":"10.1109/IITC.2000.854274","DOIUrl":null,"url":null,"abstract":"A new design Hollow-Cathode Magnetron (HCM) source was evaluated for 0.10 /spl mu/m copper (Cu) seed deposition applications. The new source included: (i) an external Dual Coil electromagnet for plasma confinement and metal ion flux control, and (ii) an optimized DC magnetron for high plasma density operation and improved target erosion. With the modified source, highly uniform deposition of copper seed(/spl sim/2%, 1/spl sigma/) was achieved on 200 mm wafers minimizing the center-to-edge variability in subsequent electrochemical copper fill (electrofill). In addition, the high plasma density operation significantly improved conformality of the seed deposition allowing reduction of the seed field thickness from 1500 /spl Aring/ to /spl sim/800 /spl Aring/ while achieving void free electrofill of 0.10-0.13 /spl mu/m test structures.","PeriodicalId":287825,"journal":{"name":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A new hollow-cathode magnetron source for 0.10 /spl mu/m copper applications\",\"authors\":\"K.A. Ashtiani, E. Klawuhn, D. Hayden, M. ow, K. B. Levy, M. Danek\",\"doi\":\"10.1109/IITC.2000.854274\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new design Hollow-Cathode Magnetron (HCM) source was evaluated for 0.10 /spl mu/m copper (Cu) seed deposition applications. The new source included: (i) an external Dual Coil electromagnet for plasma confinement and metal ion flux control, and (ii) an optimized DC magnetron for high plasma density operation and improved target erosion. With the modified source, highly uniform deposition of copper seed(/spl sim/2%, 1/spl sigma/) was achieved on 200 mm wafers minimizing the center-to-edge variability in subsequent electrochemical copper fill (electrofill). In addition, the high plasma density operation significantly improved conformality of the seed deposition allowing reduction of the seed field thickness from 1500 /spl Aring/ to /spl sim/800 /spl Aring/ while achieving void free electrofill of 0.10-0.13 /spl mu/m test structures.\",\"PeriodicalId\":287825,\"journal\":{\"name\":\"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2000.854274\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2000.854274","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

对一种新型空心阴极磁控管(HCM)源在0.10 /spl mu/m铜(Cu)种子沉积中的应用进行了评价。新光源包括:(i)用于等离子体约束和金属离子通量控制的外部双线圈电磁铁，以及(ii)用于高等离子体密度操作和改进目标侵蚀的优化直流磁控管。利用改进的源，在200毫米晶圆上实现了高度均匀的铜籽沉积(/spl sim/2%， 1/spl sigma/)，最大限度地减少了后续电化学铜填充(electrofill)过程中中心到边缘的变化。此外，高等离子体密度操作显著提高了种子沉积的一致性，使种子场厚度从1500 /spl μ m/减少到/spl μ m/800 /spl μ m/，同时实现了0.10-0.13 /spl μ m/ m的无空隙电填充测试结构。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A new hollow-cathode magnetron source for 0.10 /spl mu/m copper applications

A new design Hollow-Cathode Magnetron (HCM) source was evaluated for 0.10 /spl mu/m copper (Cu) seed deposition applications. The new source included: (i) an external Dual Coil electromagnet for plasma confinement and metal ion flux control, and (ii) an optimized DC magnetron for high plasma density operation and improved target erosion. With the modified source, highly uniform deposition of copper seed(/spl sim/2%, 1/spl sigma/) was achieved on 200 mm wafers minimizing the center-to-edge variability in subsequent electrochemical copper fill (electrofill). In addition, the high plasma density operation significantly improved conformality of the seed deposition allowing reduction of the seed field thickness from 1500 /spl Aring/ to /spl sim/800 /spl Aring/ while achieving void free electrofill of 0.10-0.13 /spl mu/m test structures.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)

自引率

0.00%

发文量