{"title":"下一代非易失性存储器","authors":"M. Kao","doi":"10.1109/MTDT.2007.4547616","DOIUrl":null,"url":null,"abstract":"Recently, Next-generation non-volatile memories continue to receive great attention due to its scalability, rapid read and write performance, simple structure, and easy incorporation with CMOS process. There are many candidates for ideal non-volatile memory, such as Magnetro-resistive RAM (MRAM), Phase change RAM (PCRAM), and Resistive RAM (RRAM). This talk will discuss the strengths and weaknesses of different emerging non-volatile memory technologies and introduce the current status of the new non-volatile memory research program at ITRI.","PeriodicalId":422226,"journal":{"name":"2007 IEEE International Workshop on Memory Technology, Design and Testing","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Next-generation non-volatile memory\",\"authors\":\"M. Kao\",\"doi\":\"10.1109/MTDT.2007.4547616\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recently, Next-generation non-volatile memories continue to receive great attention due to its scalability, rapid read and write performance, simple structure, and easy incorporation with CMOS process. There are many candidates for ideal non-volatile memory, such as Magnetro-resistive RAM (MRAM), Phase change RAM (PCRAM), and Resistive RAM (RRAM). This talk will discuss the strengths and weaknesses of different emerging non-volatile memory technologies and introduce the current status of the new non-volatile memory research program at ITRI.\",\"PeriodicalId\":422226,\"journal\":{\"name\":\"2007 IEEE International Workshop on Memory Technology, Design and Testing\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-12-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE International Workshop on Memory Technology, Design and Testing\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MTDT.2007.4547616\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE International Workshop on Memory Technology, Design and Testing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTDT.2007.4547616","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Recently, Next-generation non-volatile memories continue to receive great attention due to its scalability, rapid read and write performance, simple structure, and easy incorporation with CMOS process. There are many candidates for ideal non-volatile memory, such as Magnetro-resistive RAM (MRAM), Phase change RAM (PCRAM), and Resistive RAM (RRAM). This talk will discuss the strengths and weaknesses of different emerging non-volatile memory technologies and introduce the current status of the new non-volatile memory research program at ITRI.
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