Improved noise coupling performance using optimized Teflon liner with different TSV structures for 3D IC integration

In this paper, performance of noise coupling is studied using conventional SiO2 liner and Teflon AF1600 liner over different TSV structures (using only liner and liner surrounded by p+ guard ring). We have taken an optimized liner thickness of 0.15 μm and remaining metal filler as Cu for the entire simulation purpose. Our result confirms significant improvement in noise coupling using liners made up of Teflon AF1600 as compared to the conventional SiO2 liners in case of both proposed TSV structures. Also, Teflon AF1600 offers improved noise coupling performance than conventional SiO2 as liner in both proposed TSV structures at higher frequency. So Teflon AF1600 can be an ideal contender as a liner material for via last process of TSV fabrication.