三甲基硅烷基PE-CVD /spl α /-SiCO:H低k薄膜的表征

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI:10.1109/IITC.2000.854279

B.K. Wang, M.J. Loboda, G.A. Cerny, R. F. Schneider, J.A. Seifferly, T. Washer

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引用次数: 1

摘要

基于三甲基硅烷(3MS)的低k /spl α /-SiCO:H薄膜可以在典型的PECVD设备上使用3MS、He和N/sub 2/O制备。本研究在不同的工艺条件下，对这些薄膜的结构、组成和电学特性进行了评价。利用RBS和FTIR对膜的组成和结构进行分析。薄膜经沉积表征，并在400℃退火后观察其热稳定性。3MS low-k /spl α /-SiCO:H薄膜薄膜密度低(1.14-1.34 g/cm/sup 3/)， k低(1 mA/cm/sup 2/时2.64 MV/cm)。

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The characterization of trimethylsilane based PE-CVD /spl alpha/-SiCO:H low-k films

The trimethylsilane (3MS) based low-k /spl alpha/-SiCO:H films can be made using 3MS, He and N/sub 2/O in typical PECVD equipment. In this study, the structure, composition, and electrical characteristics of these films were evaluated with different process conditions. RBS and FTIR were evaluated to understand the composition and structure of films. The films have been characterized as-deposited and after annealing at 400/spl deg/C to see the thermal stability. 3MS low-k /spl alpha/-SiCO:H films showed low bulk film density (1.14-1.34 g/cm/sup 3/), low-k (2.64 MV/cm at 1 mA/cm/sup 2/).

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Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)

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