用于DC-DC转换器的低反向恢复电荷30 v功率mosfet

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI:10.1109/ISPSD.2013.6694456

T. Hirao, T. Hashimoto, N. Shirai, Hiroki Arai, N. Matsuura, H. Matsuura

{"title":"用于DC-DC转换器的低反向恢复电荷30 v功率mosfet","authors":"T. Hirao, T. Hashimoto, N. Shirai, Hiroki Arai, N. Matsuura, H. Matsuura","doi":"10.1109/ISPSD.2013.6694456","DOIUrl":null,"url":null,"abstract":"Two low reverse recovery charge solutions for 30-V power MOSFETs are proposed. One solution is a device consisting of a MOSFET and a Schottky barrier diode (SBD) in a single chip featuring a double epi structure to enhance the breakdown voltage. The other solution is a device with an integrated SBD in every unit cell that can achieve a high threshold voltage via the P- layer with Schottky contact. Both proposed devices exhibited low reverse recovery currents in simulations. Moreover, the surge voltage of the first device which we fabricated reduced by 58%, which enables the use of a lower voltage device and a reduction of the device loss.","PeriodicalId":175520,"journal":{"name":"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Low reverse recovery charge 30-V power MOSFETs for DC-DC converters\",\"authors\":\"T. Hirao, T. Hashimoto, N. Shirai, Hiroki Arai, N. Matsuura, H. Matsuura\",\"doi\":\"10.1109/ISPSD.2013.6694456\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two low reverse recovery charge solutions for 30-V power MOSFETs are proposed. One solution is a device consisting of a MOSFET and a Schottky barrier diode (SBD) in a single chip featuring a double epi structure to enhance the breakdown voltage. The other solution is a device with an integrated SBD in every unit cell that can achieve a high threshold voltage via the P- layer with Schottky contact. Both proposed devices exhibited low reverse recovery currents in simulations. Moreover, the surge voltage of the first device which we fabricated reduced by 58%, which enables the use of a lower voltage device and a reduction of the device loss.\",\"PeriodicalId\":175520,\"journal\":{\"name\":\"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2013.6694456\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2013.6694456","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

提出了两种用于30v功率mosfet的低反向恢复电荷解决方案。一种解决方案是将一个MOSFET和一个肖特基势垒二极管(SBD)组成一个具有双外延结构的单芯片，以提高击穿电压。另一种解决方案是在每个单元电池中集成SBD，可以通过具有肖特基接触的P层实现高阈值电压。两种器件在模拟中均表现出较低的反向恢复电流。此外，我们制造的第一种器件的浪涌电压降低了58%，从而可以使用更低电压的器件并减少器件损耗。

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Low reverse recovery charge 30-V power MOSFETs for DC-DC converters

Two low reverse recovery charge solutions for 30-V power MOSFETs are proposed. One solution is a device consisting of a MOSFET and a Schottky barrier diode (SBD) in a single chip featuring a double epi structure to enhance the breakdown voltage. The other solution is a device with an integrated SBD in every unit cell that can achieve a high threshold voltage via the P- layer with Schottky contact. Both proposed devices exhibited low reverse recovery currents in simulations. Moreover, the surge voltage of the first device which we fabricated reduced by 58%, which enables the use of a lower voltage device and a reduction of the device loss.

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2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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