J. Altet, D. Mateo, D. Gómez, X. Perpiñà, M. Vellvehí, X. Jordà
{"title":"用于射频功率放大器功率增益监测的直流温度测量","authors":"J. Altet, D. Mateo, D. Gómez, X. Perpiñà, M. Vellvehí, X. Jordà","doi":"10.1109/TEST.2012.6401589","DOIUrl":null,"url":null,"abstract":"In this paper we demonstrate that the steady state temperature increase due to the power dissipated by the circuit under test can be used as observable to test the gain of a 2GHz linear class A Power Amplifier. As a proof of concept, we use two strategies to monitor the temperature: a temperature sensor embedded within the same silicon die, which can be used for a BIST approach, and an Infra Red camera, with applications to failure analysis and product debugging.","PeriodicalId":353290,"journal":{"name":"2012 IEEE International Test Conference","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"DC temperature measurements for power gain monitoring in RF power amplifiers\",\"authors\":\"J. Altet, D. Mateo, D. Gómez, X. Perpiñà, M. Vellvehí, X. Jordà\",\"doi\":\"10.1109/TEST.2012.6401589\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we demonstrate that the steady state temperature increase due to the power dissipated by the circuit under test can be used as observable to test the gain of a 2GHz linear class A Power Amplifier. As a proof of concept, we use two strategies to monitor the temperature: a temperature sensor embedded within the same silicon die, which can be used for a BIST approach, and an Infra Red camera, with applications to failure analysis and product debugging.\",\"PeriodicalId\":353290,\"journal\":{\"name\":\"2012 IEEE International Test Conference\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-11-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Test Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TEST.2012.6401589\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Test Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TEST.2012.6401589","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
DC temperature measurements for power gain monitoring in RF power amplifiers
In this paper we demonstrate that the steady state temperature increase due to the power dissipated by the circuit under test can be used as observable to test the gain of a 2GHz linear class A Power Amplifier. As a proof of concept, we use two strategies to monitor the temperature: a temperature sensor embedded within the same silicon die, which can be used for a BIST approach, and an Infra Red camera, with applications to failure analysis and product debugging.
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