毫米波CMOS器件电磁场分析工艺参数的系统标定程序

Proceedings of the 2015 International Conference on Microelectronic Test Structures Pub Date : 2015-03-23 DOI:10.1109/ICMTS.2015.7106100

K. Takano, K. Katayama, S. Mizukusa, S. Amakawa, T. Yoshida, M. Fujishima

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引用次数: 5

摘要

本文提出了毫米波和太赫兹频率CMOS后端器件电磁分析工艺参数的系统标定方法。采用输电线在各测量频率的传播常数和低频的RLGC模型参数作为参数拟合的客观变量。结果表明，采用标定工艺参数的电磁仿真结果与330 GHz频率下的测量结果吻合较好。

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Systematic calibration procedure of process parameters for electromagnetic field analysis of millimeter-wave CMOS devices

This work proposed the systematic calibration method of process parameters for electromagnetic analysis of CMOS back-end devices in millimeter-wave and THz frequencies. It uses the propagation constants of transmission lines in all the measurement frequency and the RLGC model parameters in low frequency as the objective variables of the parameter fitting. It was showed that the EM simulation results using calibrated process parameters were in good agreement with the measurement results up to 330 GHz.

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Proceedings of the 2015 International Conference on Microelectronic Test Structures

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