一种低成本、低温实现碳纳米管通硅孔导体的方法

Ziyue Zhang, Yingtao Ding, Baoyan Yang, Anrun Ren, Zhiming Chen
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引用次数: 1

摘要

通硅通孔(TSV)技术是三维(3D)异构集成策略的关键。本文提出了一种低成本、低温的在盲TSV中制备碳纳米管(CNT)导体的新方法。通过对金属碳纳米管的导电水基溶液进行包覆、真空处理、纺丝等一系列精密操作,成功地将致密的碳纳米管填充到各种尺寸的盲TSV中,作为TSV的导体。该方法避免了在tsv中生长或运输碳纳米管导体的昂贵和高温过程,并且与其他集成策略兼容。此外,结合真空辅助自旋涂覆聚酰亚胺衬垫,可以实现低成本、低温的盲制tsv工艺流程。本研究为基于碳纳米管的tsv的制备和应用提供了一种有前途的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Low-Cost and Low-Temperature Method to Realize Carbon Nanotube Conductor in Through-Silicon-Via
Through-silicon-via (TSV) technology is the key to three-dimensional (3D) heterogeneous integration strategy. In this paper, a novel low-cost and low-temperature method to fabricate carbon nanotube (CNT) conductor in blind TSV is proposed. Based on a series of precise operations of the conductive water-based solution of metallic CNTs including coating, vacuum treatment, and spinning, dense CNTs are successfully filled into blind TSVs of various dimensions, which can serve as the TSV conductors. This method avoids the expensive and high-temperature processes to grow or transport CNT conductors in TSVs, and is compatible with other integration strategies. Moreover, together with the vacuum-assisted spin coating of polyimide (PI) liners, a low-cost and low-temperature fabrication flow for blind TSVs can be achieved. This work provides a promising method towards the fabrication and application of CNT based TSVs.
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