大功率mosfet体二极管的高效同步整流优化

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856792

J. Zeng, C. F. Wheatley, R. Stokes, C. Kocon, S. Benczkowski

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引用次数: 19

摘要

本文研究了寄生双极结晶体管(BJT)对功率MOSFET体-二极管特性的影响。仿真和实验结果表明，通过增强功率mosfet的N/sup +/源(发射极)、p阱(基极)和N-epi层(集电极)形成的寄生BJT，可以改善体二极管的正向导通和反向恢复特性，并解决了增强寄生BJT与保持器件的非箝位电感开关(UIS)能力之间的权衡问题。

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Optimization of the body-diode of power MOSFETs for high efficiency synchronous rectification

An investigation is performed in this paper upon the impact of the parasitic bipolar junction transistor (BJT) with respect to the body-diode characteristics of the power MOSFET. Simulated and experimental results show that the forward conduction and the reverse recovery characteristics of the body-diode can be improved by enhancing the parasitic BJT, formed by the N/sup +/ source (emitter), P-well (base) and N-epi layer (collector) of power MOSFETs, Furthermore, the trade-off between enhancing the parasitic BJT and retaining the device's unclamped inductive switching (UIS) capability is also addressed.

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12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

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